PART |
Description |
Maker |
BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit DDR-II SRAM 2-Word Burst Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 36-Mbit QDR-II SRAM 4-Word Burst Architecture Fuse 256K (32K x 8) Static RAM 64/256/512/1K/2K/4K x 18 Synchronous FIFOs Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Neuron® Chip Network Processor 64-Kbit (8K x 8) Static RAM 72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
|
NXP Semiconductors N.V.
|
CAT64LC40ZJ CAT64LC40ZS CAT64LC40J-TE7 CAT64LC40J- |
72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit QDR-II SRAM 4-Word Burst Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture SPI Serial EEPROM SPI串行EEPROM 72-Mbit QDR-II™ SRAM 2-Word Burst Architecture SPI串行EEPROM 72-Mbit QDR™-II SRAM 2-Word Burst Architecture
|
Analog Devices, Inc.
|
CY7C1515AV18-200BZXI CY7C1526AV18-278BZXC CY7C1526 |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165 8M X 9 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
CY7C1412BV18-167BZXI CY7C1414BV18-167BZXI |
36-Mbit QDR-IISRAM 2-Word Burst Architecture 1M X 36 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1513JV18-250BZXC |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
CY7C1510V18-278BZC CY7C1510V18-278BZI CY7C1510V18- |
72-Mbit QDR-IISRAM 2-Word Burst Architecture 8M X 9 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 8M X 9 QDR SRAM, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 4M X 18 QDR SRAM, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 2M X 36 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 4M X 18 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-II??SRAM 2-Word Burst Architecture
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1141V18 CY7C1145V18 CY7C1156V18 CY7C1143V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
|
CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构(2.5周期读写延迟 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1543V18-300BZI CY7C1545V18-375BZI |
72-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 4M X 18 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|